Broadcom Principal Memory Circuit Design Engineer 

United States, Minnesota 

820349776

Available Job Responsibilities

• Analyze different memory architectures and highlight the tradeoffs

• Design and build memory or circuit blocks at the gate or transistor level

• Simulate and analyze the circuit design using transistor level simulators

• Extract the layout and perform post-layout simulations and verification

• Floorplan physical implementation and leafcell layout integration to build the physical macro

• Integrate characterization flow to extract timing and power information

• Develop scripts to automate characterization flow, simulations, and verification

• Specify and verify various behavioral and physical memory models

• Document the design specifications, behavioral description, and timing diagrams

• Specify silicon test plan and correlate silicon to simulation data

• Help debug silicon issues

Skillset Required

• Strong knowledge in development of memory compilers or custom digital circuits of all types; SRAMs, Register-files, Multi-ports, ROM, etc…

• Deep understanding of transistor level circuit behavior and device physics

• Good understanding of signal integrity, EM/IR, and reliability analysis

• Understanding of memory behavioral and physical models

• Understanding of DFT schemes and chip level integration

• Familiarity with test setups, silicon testing and debug is a plus

• Proficient in running simulators, writing automation scripts, and are tools savvy. Proficiency in Python programming language is considered a positive.

• Good communication, interpersonal, and leadership skills

• Motivated, self-driven and good at multi-tasking

Compensation and Benefits

The annual base salary range for this position is $127,000 - $203,000

This position is also eligible for a discretionary annual bonus in accordance with relevant plan documents, and equity in accordance with equity plan documents and equity award agreements.