Texas Instruments GaN Process Integration Engineer 

United States, Texas, Dallas 

273864611

About the job

This process integration engineer position is focused on development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's advanced technology development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. Experience in development of GaN devices for normally-off operation is desired. The scope of the job includes, but not limited to:

• GaN device simulations (TCAD), device design, layout
• Fabrication flow development and characterization of GaN devices
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root-cause investigation for device/process/reliability/yield improvements

The ideal candidate is expected to have a strong understanding of the following:

• High voltage power FETs and other relevant semiconductor device physics
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis

Strong hands-on lab experience and excellent problem solving skills are also needed. Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams.

Minimum requirements:

• Masters in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree
• 3 years of experience working on GaN-based electronic device development

Preferred qualifications:

• PhD in Electrical Engineering, Electrical & Computer Engineering, Materials Engineering, Physics, or related degree

• 5+ years of experience in GaN-based electronic device development

• Experience in normally-off GaN device development for high power switching applications

• Demonstrated strong analytical and problem solving skills

• Strong verbal and written communication skills

• Ability to work in teams and collaborate effectively with people in different functions

• Strong time management skills that enable on-time project delivery

• Demonstrated ability to build strong, influential relationships

• Ability to work effectively in a fast-paced and rapidly changing environment

• Ability to take the initiative and drive for results

• Sound decision-making capabilities and the ability to prioritize tasks and adapt accordingly