Broadcom HBM Memory Applications Engineer 

United States, Colorado, Fort Collins 

292588902

Job Description:

Job Description:

. This role involves working as a highly skilled

BSEE and 2+ years relevant experience in DDR memory system design, validation, bring-up and debugging or MSEE degree with experience in DDR memory system design, validation, bring-up and debugging.

Required Skills:

• Experiencewith DDR memory interfaces including the PHY, controller and embedded test capability. Direct experience with HBM memory is a plus.

• Experiencedeveloping DRAM memory tests desired. Knowledge of different types of memory tests is a must.

• Understandfundamentals of VLSI IC I/O & control, and built-in self-test (BIST).

• Generalknowledge of semiconductor technology and ASIC design flow including Verilog simulation and timing analysis. Verilog experience is a plus.

• Experiencewith state-of-the-art lab test equipment used for evaluating memory interfaces including sampling scopes, real time scopes, function generators and logic analyzers.

Programming experience in at least one of the following languages: Ruby (preferred), C, C++, Perl, or Python

• Strongdebugging skills are a must

Additional Requirements:

• Strongverbal, written communication, and presentation skills.

• Teamplayer that can easily work with different personalities and skill levels.

• Abilityto multitask and manage multiple technical issues in parallel.

• Wellorganized, methodical, and detail oriented.

• Mustdevelop, accurately track, and meet commitments to product characterization or engineering development schedules.

• Someminimal travel time may be required.

Typical Duties Include:

• Developa detailed understanding of Broadcom's HBM IP, how to control and evaluate the IP, and understand the interplay of the memory performance at the ASIC and system levels.

• Developscripts and run characterization shmoos to isolate issues.

• Designautomated bench level device testing procedures by utilizing programmable test equipment and HBM IP built-in test functions.

closely with the HBM IP design teams to root cause HBM issues.

with memory suppliers to support resolution of HBM DRAM issues or defects.

• Generatecomprehensive test reports with clear analysis methods that highlight the relationships between stimulus / setup conditions and device performance.

Compensation and Benefits

The annual base salary range for this position is $73,000 - $117,000.

This position is also eligible for a discretionary annual bonus in accordance with relevant plan documents, and equity in accordance with equity plan documents and equity award agreements.