About the Role
We are working on exciting projects, connecting materials to systems, to drive new innovations that enable a wide range of advanced Logic-Memory devices and technologies, and associated material and processes interactions. You can be part of this cutting-edge modeling and design team, where you will have the opportunity to model and simulate new technologies that answers the continuous demands for scaled devices, denser interconnects that significantly improves the system Power, Performance and Area (PPA).
This primary responsibility of this position will be to focus on DTCO modeling to support the unit process and integration flow development for next generation logic and DRAM nodes. You will play a key role in shaping the future of advanced logic and DRAM technologies by providing DTCO simulation-driven insights that influence materials, process and design decisions.
Key Responsibilities
Development of TCAD process and device models to enable predictive analysis for advanced logic (FinFET, GAA, CFET) and DRAM architectures (6F2, 4F2 VCT and 3D DRAM)
Development and modification of speculative process integration schemes and risk/benefit assessment.
Extraction of compact model representation of TCAD simulated devices.
Layout development/design of standard logic cells and DRAM array
Interconnect modeling and parasitic resistance and capacitance extraction
SPICE modeling and PPA projection for benchmark logic circuits & blocks and DRAM array / periphery
Collaborate with cross-functional teams to define simulation requirements, interpret results, and provide actionable design and process recommendations.
Support technology roadmap development by evaluating new materials, interconnect structures, process flows and design.
Drive design-of-experiment (DOE) studies and sensitivity analyses to understand key drivers of electrical performance and reliability.
Contribute to the development and automation of internal simulation workflows, tools, and best practices to improve modeling efficiency and accuracy.
Document and present simulation methodologies, results, and recommendations to both technical and executive audiences.
Stay current with industry trends, emerging technologies, and academic research in advanced packaging and simulation methodologies.
Required Qualifications
Master’s or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related field.
5–10 years of hands-on industry experience with Synopsys 3D TCAD process, device, parasitic extraction and spice modeling tools towards logic or memory technology development.
Strong fundamental understanding of semiconductor device physics related to logic and DRAM technologies.
Familiarity with logic (FinFET, GAA and CFET) and DRAM process integration flows (FEOL / MOL / BEOL) and 3D device structures.
Experience with logic benchmark circuits and PPA evaluation methodologies.
Experience with DRAM array and periphery operation.
Experience with scripting and automation (e.g., Python, TCL, MATLAB) to streamline simulation workflows.
Excellent analytical, problem-solving, and communication skills.
Proven ability to work independently and collaboratively in a fast-paced, cross-functional environment.
Strong problem-solving abilities in interdisciplinary areas
Ability to present scientific and/or experimental results in a concise and convincing manner
Desire to stay up to date with industry challenges and recent advancements
Passionate and highly motivated to learn new things
Preferred Qualifications
Experience with device and circuit level reliability modeling
Recent experience with writing research papers for conference and journal publications
Experience with standard cell characterization, RTL synthesis, DRC/LVS and place-and-route and timing analysis flows
Experience in calibration tohardware/measurementsand correlations
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