Nokia Design characterization electro-absorption modulators 

France 

589607193

What you will learn and contribute to

The development of new generations of optical transceivers, operating at very high speed, is essential for the implementation of the next generations of optical networks. In particular, for applications such as data centers and optical access networks, the significant improvement of component performance has to combine with compactness, manufacturability and low production costs. Photonic integration on InP is a reliable technological solution for the realization of high-performance components with advanced functionalities.

The internship will focus on the optimization of electro-absorption modulators (EAM), which can be realized on III-V Lab’s PIC SIBH platform. The EAM is a key BB for the realization of very-high-speed optical transmitters. Based on the technological innovations introduced on the PIC SIBH platform of the III-V Lab, the activity will develop as follows:
• Optimization of AlGaInAs MQW hetero-structures for EAMs, based on quantum confined Stark effect (QCSE).
• Simulation of the electro-optical response of EAMs (based on SIBH and DR guides) realized on n-doped and semi-insulating substrates.
• Study of distributed EAM configurations and comparison with standard lumped EAM.
• Design of new generations of EAMs with a bandwidth > 60GHz, achievable on the III-V Lab PIC platform.
• Static and dynamic characterization of test circuits for EAMs fabricated on the PIC SIBH platform of III-V Lab.

Your skills and experience

Education: you are a 2nd year undergraduate Master student (or, equivalently, a 3rd year undergraduate student of engineering school).

You have: