המקום בו המומחים והחברות הטובות ביותר נפגשים
What you'll be doing:
Mixed-Signal/Analog circuit design for High Speed Memory I/O Interfaces
Solve challenge of circuit designs in deep submicron CMOS FinFET processes
Take designs through productization and be involved in all stages of development
Work with multi-functional teams to optimize the designs
What we need to see :
BSEE or MSEE.
Candidate must have 5+ years of well-rounded high Speed memory (LPDDR, DDR, GDDR, HBM) or SerDes related design experience.
System level timing budgets, specs and analysis
In-depth understanding of deep submicron CMOS FinFET process and circuit design issues
Familiarity with device reliability, ESD and Latch-Up requirements
Supervise layout development and understand all ESD/Latch-Up, reliability rules; Broad circuit design and implementation knowledge with significant depth
Working Knowledge of package substrate, board design and power delivery is a plus. Working knowledge of Cadence custom design tools, various circuit simulators like Hspice, XA, FineSim, Spectre
Working knowledge of Verilog, Nanotime, Matlab is plus
Hands on with Lab test and measurement equipment is a plus
משרות נוספות שיכולות לעניין אותך