מציאת משרת הייטק בחברות הטובות ביותר מעולם לא הייתה קלה יותר
Intel Master Thesis Investigating Self-Heating Advanced Transistors Germany, Bavaria, Munich 191860951
With the increasing operating frequencies and miniaturization of electronics, transistors are densely packed, raising power densities and leading to transient self-heating effects. These effects alter device characteristics and impact circuit operation. Accurate modeling of self-heating requires precise characterization data, which is challenging to obtain due to the short time scales involved in advanced transistor devices like 3D FinFETs and Gate All Around FETs.
The goal of this thesis is to compare different characterization methods for analyzing the self-heating effect in advanced FinFET technologies and prepare these methods for Gate All Around technologies. This involves using both modeling approaches and experimental methods, including techniques like the AC-DC mixed method or pulsed measurements.
Requirements- Educational Background : ES, RFE
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